Inductorless 1-10.5 GHz Wideband LNA for Multistandard Applications

Sven Karsten Hampel, Oliver Schmitz, Marc Tiebout, Ilona Rolfes

5th Asian Solid-State Circuits Conference (A-SSCC 2009), pp. 269-272, Taipei, Taiwan, Nov 16-18, 2009


Abstract

This article presents the design of a fully integrated inductorless LNA for wireless applications including WLAN, Bluetooth and UWB. The circuit was fabricated in 65 nm CMOS technology and operates at a supply voltage of 1.2 V. The two-stage design is comprised of a current reuse shunt feedback input stage followed by a differential pair, incorporating an active inductor load to compensate the gain roll-off. The circuit exhibits a peak gain of 16.5 dB, while the 3-dB bandwidth as well as the input and output matching of better than -10 dB range from 1-10.5 GHz. The noise figure is kept below 5 dB within this frequency range, offering a minimum noise figure of 3.9 dB. The linearity in terms of P1dB,out and oIP3 offers nearly constant behavior with -5 dBm and 3 dBm respectively. The active area takes up only 0.021 mm2.

[IEEE Library]

Tags: CMOS, LNA