Minimal Area 65nm CMOS Amplifier for Ultra-Wideband Transmitter Applications

Oliver Schmitz, Sven Karsten Hampel, Koen Mertens, Marc Tiebout, Ilona Rolfes

IEEE International Conference on Ultra-Wideband (ICUWB 2010), Vol. 1, pp. 1-4, Nanjing, China, Sep 20-23, 2010


Abstract

This work presents the design of an inductorless, monolithically integrated differential CMOS wideband amplifier covering the frequency range from 0.2 to 10.2 GHz, thus being a suitable candidate for full-band Ultra-Wideband transmitter applications. The amplifier is processed in a 1.2 V 65nm CMOS technology and is comprised of two pseudo differential current-reuse shunt-feedback stages combined with active inductor loads. Measurement results of the bonded chip show a power gain of 10.2 dB and return losses of better than -10 dB for the input and output respectively. The measured output referred 1 dB compression point is above 3.9 dBm within the entire specified frequency range. With a power consumption of 39 mW and a die size of only 370?m × 370?m, this circuit represents a capable minimal area alternative to classical distributed amplifier approaches focussing on that frequency range.

[IEEE-Library]

Tags: Ultra-Wideband